Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1991-05-01
1994-03-08
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257334, 257369, 257372, 257377, H01L 2702, H01L 2978, H01L 2701, H01L 2906
Patent
active
052930530
ABSTRACT:
A new class of CMOS integrated circuits, wherein the PMOS and NMOS devices are both configured as vertical transistors. One trench can contain a PMOS device, an NMOS device, and a gate which is coupled to control both the PMOS device and the NMOS device. Latchup problems do not arise, and n+ to p+ spacing rules are not required.
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Mahant-Shetti Shivaling S.
Malhi Satwinder S.
Sundaresan Ravishankar
Crane John D.
Donaldson Richard L.
Hiller William E.
Prenty Mark V.
Texas Instruments Incorporated
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