Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1991-05-13
1992-11-17
Hille, Rolf
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257408, 257409, 257900, H01L 2906, H01L 2704, H01L 2934, H01L 2940
Patent
active
051648067
ABSTRACT:
An element isolating structure employed for isolating the elements of a semiconductor substrate has an impurity region having a concentration lower than that of a source/drain and a channel stop region, between the source/drain of an MOS transistor formed in an active region, and the channel stop region formed under an LOCOS film.
A field shield isolating structure has a low concentrated impurity region between the source/drain of an MOS transistor formed in the active region and the substrate surface region covered by a field shield electrode layer. The low concentrated impurity region improves its junction breakdown voltage in the boundary region with the element isolating region.
An improved LOCOS film is formed into an amorphous region on the surface of the substrate by an oblique rotating ion implanting method, and the amorphous region is formed by thermal oxidation. The method suppresses the emergence of a bird's beak.
REFERENCES:
patent: 4095251 (1978-06-01), Dennard et al.
Nagatomo Masao
Okudaira Tomonori
Okumura Yoshinori
Shimano Hiroki
Hille Rolf
Limanek Robert
Mitsubishi Denki & Kabushiki Kaisha
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