Electrostic discharge protection device comprising a plurality o

Details Electrostic discharge protection device comprising a plurality o Electrostic discharge protection device comprising a plurality o

1996-04-09

1998-11-03

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257192, 257594, H01L 2362

Patent

active

058313125

ABSTRACT:
The present invention discloses two kinds of ESD protection devices, an MOS transistor and an diode, and their method of fabrication. The MOS transistor is fabricated in a semiconductor substrate having a plurality of trenches formed therein at one side of its gate. One of the source/drain regions of the MOS transistor is formed in the substrate and disposed along the periphery of those trenches. The diode is fabricated in a semiconductor substrate having a plurality of trenches formed therein. A dope region is thereafter formed in the substrate and disposed along the periphery of those trenches. Accordingly, either the MOS transistor or diode has a vertically enlarged area along the trenches to effectively prevent ESD damage, but without consuming a great amount of horizontal chip area.

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