Electrostatic puncture preventing element

Details Electrostatic puncture preventing element Electrostatic puncture preventing element

1974-02-28

1978-03-21

Miller, Jr., Stanley D.

357 36, 357 51, 357 86, H01L 2990

Patent

active

040806162

ABSTRACT:
A protective element for preventing electrostatic puncture of a semiconductor integrated circuit comprises a semiconductor substrate of one conductivity type, a first semiconductor region of the opposite conductivity type formed within a selected part of the surface of the semiconductor substrate, and a second semiconductor region of the one conductivity type formed within a selected part of the surface of the first semiconductor region, the first and second semiconductor regions being partially short-circuited. When a surge pulse voltage is impressed between the substrate and the second region, the element operates as a diode or a transistor so as to absorb the surge pulse.

REFERENCES:
patent: 3210620 (1965-10-01), Lin
patent: 3590340 (1971-06-01), Kubo et al.
patent: 3629667 (1971-12-01), Lubart et al.
patent: 3712995 (1973-01-01), Steudel
patent: 3739238 (1973-06-01), Hara
patent: 3754171 (1973-08-01), Anzai et al.
patent: 3801886 (1974-04-01), Imaizumi et al.

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