Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-07-29
2008-07-29
Prenty, Mark (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S361000
Reexamination Certificate
active
07405446
ABSTRACT:
Systems and methods are disclosed herein to provide improved electrostatic protection for electrical circuits. For example, in accordance with an embodiment of the present invention, an electrostatic protection device includes: a drain region formed in a substrate; a gate separated from the substrate by a gate oxide; and an isolation region formed in the substrate, the isolation region being adapted to isolate the gate oxide from a DC voltage coupled to the drain region.
REFERENCES:
patent: 5208475 (1993-05-01), Mortensen
patent: 5910673 (1999-06-01), Hsu et al.
patent: 6204537 (2001-03-01), Ma
patent: 6670678 (2003-12-01), Kojima
patent: 7067887 (2006-06-01), Chang et al.
patent: 7323752 (2008-01-01), Chu et al.
Agam Moshe
Gupta Mayank
Smoak Rick
Lattice Semiconductor Corporation
MacPherson Kwok & Chen & Heid LLP
Prenty Mark
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