Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-04-22
1997-03-11
Munson, Gene M.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257356, H01L 2362
Patent
active
056104278
ABSTRACT:
An electrostatic protection device for use in a semiconductor integrated circuit, includes a base region of a first conductivity type formed at a principal surface of a semiconductor substrate, a plurality of collector regions constituted of a plurality of first diffused regions of a second conductivity type opposite to the first conductivity type. The first diffused regions are formed on a surface of the base region in the form of a plurality of strips parallel to each other but separate from each other. Emitter regions are constituted of a second diffused region of the second conductivity type formed in the form of a strip between each pair of adjacent collector regions of the plurality of collector regions and a third diffused region of the second conductivity type formed under a contact hole formed in at least one portion of a boundary region at a side of the second diffused region adjacent to the collector region, the third diffused region being connected to the second diffused region. A base contact region of the first conductivity having a high impurity concentration is formed within the base region so as to substantially surround the collector regions and the emitter regions.
REFERENCES:
patent: 4821089 (1989-04-01), Strauss
patent: 4994874 (1991-02-01), Shimizu et al.
patent: 5001529 (1991-03-01), Ohshima et al.
Munson Gene M.
NEC Corporation
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