Electrostatic discharge structure

Details Electrostatic discharge structure Electrostatic discharge structure

1998-11-27

1999-11-23

Martin-Wallace, Valencia

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257355, 257356, 257358, 257623, 438411, 438421, H01L 2362

Patent

active

059905190

ABSTRACT:
A spike electrostatic discharge (ESD) cavity structure includes an etching stop layer including, for example, polysilicon or metal material. The etching stop layer is used as the etching stop to form an opening in the dielectric layer, inside of which a number of discharging layer pairs are formed. The opening exposes the end portions of the discharge layer pairs. The opening is a cavity and can be vacuumed or filled with air.

REFERENCES:
patent: 5243205 (1993-09-01), Kitagawa et al.
patent: 5684323 (1997-11-01), Tohyama
patent: 5786613 (1998-07-01), Kalnitsky

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