Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1998-11-27
1999-11-23
Martin-Wallace, Valencia
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257355, 257356, 257358, 257623, 438411, 438421, H01L 2362
Patent
active
059905190
ABSTRACT:
A spike electrostatic discharge (ESD) cavity structure includes an etching stop layer including, for example, polysilicon or metal material. The etching stop layer is used as the etching stop to form an opening in the dielectric layer, inside of which a number of discharging layer pairs are formed. The opening exposes the end portions of the discharge layer pairs. The opening is a cavity and can be vacuumed or filled with air.
REFERENCES:
patent: 5243205 (1993-09-01), Kitagawa et al.
patent: 5684323 (1997-11-01), Tohyama
patent: 5786613 (1998-07-01), Kalnitsky
Fu Kuan-Yu
Huang-Lu Shiang
Tang Tien-Hao
Martin-Wallace Valencia
Tran H. D.
United Microelectronics Corp.
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