Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-10-04
2005-10-04
Thomas, Tom (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S358000, C257S356000, C257S360000
Reexamination Certificate
active
06952037
ABSTRACT:
A semiconductor device includes a substrate, a well region formed in the substrate, a field effect transistor formed in the well region, and a diffused region, formed across the well region and the substrate for applying back gate potential to the well region, and forming a PN junction together with its periphery. The field effect transistor and the PN junction are connected between terminals for absorbing excess current so that an internal circuit connected to the terminals is protected.
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Ikeuchi Akira
Ishikawa Yasuhisa
Oya Hiroshi
Terada Yukihiro
Watanabe Atsushi
Lee Eugene
Mitsumi Electric Co. Ltd.
Thomas Tom
Whitham Curtis & Christofferson, P.C.
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