Electrostatic discharge protective circuit under conductive pad

Details Electrostatic discharge protective circuit under conductive pad Electrostatic discharge protective circuit under conductive pad

1999-01-14

2000-12-05

Smith, Matthew

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257356, 257357, 257360, 257367, 257369, 257388, 257401, 257204, 257173, H01L 2362

Patent

active

061570656

ABSTRACT:
An electrostatic discharge protective circuit under an input pad. The electrostatic discharge protective circuit has at least a MOS, wherein the MOS comprises a drain region, a gate structure and a source region. A metal silicon layer is on the gate structure and the source region, wherein the gate structure and the source region are coupled to each other through the metal silicon layer. A dielectric layer is over the drain region, the gate structure and the source region. A metal layer is over the dielectric layer. A via plug is in the dielectric layer, wherein the drain and the conductive layer are coupled to each other through the via plug. An input pad is over the MOS, wherein the metal layer is coupled to an input port and an internal circuit through the input pad.

REFERENCES:
patent: 5516717 (1996-05-01), Hsu
patent: 5517048 (1996-05-01), Kosaka
patent: 5646808 (1997-07-01), Nakayama
patent: 5721439 (1998-02-01), Lin
patent: 5838043 (1998-11-01), Yuan
patent: 5962876 (1999-10-01), Yu
patent: 6025631 (2000-02-01), Lin
patent: 6064093 (2000-05-01), Ohita
patent: 6064094 (2000-05-01), Infrater
patent: 6064095 (2000-05-01), Fu

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