Electrostatic discharge protective circuit formed by use of a si

Details Electrostatic discharge protective circuit formed by use of a si Electrostatic discharge protective circuit formed by use of a si

1998-11-03

2000-06-06

Gaffin, Jeffrey

Electricity: electrical systems and devices

Safety and protection of systems and devices

Load shunting by fault responsive means

361111, H02H 904

Patent

active

060726776

ABSTRACT:
An electrostatic discharge protective circuit formed by use of a silicon controller rectifier is coupled to an input port and an internal circuit for discharging electrostatic charges on the input port to ground. When the electrostatic charges are applied on the input port, a punch-through effect is created between a first P-type diffusion region and a second N-type diffusion region to turn on a parasitic NPN bipolar junction transistor. At the same time, a voltage is applied on a gate of the MOS transistor via a small-signal equivalent capacitor to turn on itself, thereby discharging the electrostatic charges. Accordingly, the trigger voltage of the silicon controller rectifier can be efficiently lowered to improve the electrostatic discharge protective capability of the silicon control rectifier.

REFERENCES:
patent: 5400202 (1995-03-01), Metz et al.
patent: 5671111 (1997-09-01), Chen
patent: 5682047 (1997-10-01), Consiglio et al.
patent: 5869873 (1999-02-01), Yu

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