Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-06-20
2006-06-20
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S355000, C257S288000, C438S197000
Reexamination Certificate
active
07064393
ABSTRACT:
An electrostatic discharge (ESD) protection device having high holding current for latch-up immunity. The ESD protection circuit is formed in a semiconductor integrated circuit (IC) having protected circuitry. The ESD protection device includes a silicon controlled rectifier (SCR) coupled between a protected supply line of the IC and ground. A trigger device is coupled from the supply line to a first gate of the SCR, and a first substrate resistor is coupled between the first gate and ground. A first shunt resistor is coupled between the first gate and ground, wherein the shunt resistor has a resistance value lower than the substrate resistor.
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Armer John
Jozwiak Phillip Czeslaw
Mergens Markus Paul Josef
Russ Cornelius Christian
Verhaege Koen Gerard Maria
Burke William J.
Flynn Nathan J.
Sarnoff Corporation
Sarnoff Europe
Wilson Scott R.
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