Electrostatic discharge protection structure

Details Electrostatic discharge protection structure Electrostatic discharge protection structure

2007-03-13

2007-03-13

Baumeister, B. William (Department: 2891)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

11221489

ABSTRACT:
The invention provides an ESD protection structure, compatible with the bipolar-CMOS-DMOS (BCD) processes, which provides an enhanced protection performance and better heat dissipation performance. The design of the ESD structures in present invention takes advantage of bipolar punch characteristics of the parasitic bipolar structure to bypass the ESD current, thus significantly reducing the trigger voltage and increasing the ESD protection level. In addition, the ESD protection circuit of the present invention can improve heat dissipation by avoid current crowding near the surface.

REFERENCES:
patent: 7019368 (2006-03-01), McCollum et al.

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