Electrostatic discharge protection for silicon-on-insulator

Details Electrostatic discharge protection for silicon-on-insulator Electrostatic discharge protection for silicon-on-insulator

1997-03-06

2000-03-07

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257347, 257350, 257546, H01L 2362, H01L 2701, H01L 2712, H01L 2900

Patent

active

060343990

ABSTRACT:
An ESD protection arrangement for a silicon-on-insulator device has an N-well type implant in the silicon substrate of the device, a p.sup.+ implant forming a juncture with the N-well type implant, and an n.sup.+ implant defining a juncture with the N-well type implant, in order to protect against negative transients and positive transients. At the p-channel threshold adjust, both the p-channel of the device and the N-well are implanted. Implanting the N-well to a depth of about 0.15 to about 0.30 .mu.m provides suitable characteristics for both the N-well and the p-channel.

REFERENCES:
patent: 4989057 (1991-01-01), Lu
patent: 5081514 (1992-01-01), Ueoka
patent: 5113236 (1992-05-01), Arnold et al.
patent: 5116768 (1992-05-01), Kawamura
patent: 5139959 (1992-08-01), Craft et al.
patent: 5185535 (1993-02-01), Farb et al.
patent: 5204988 (1993-04-01), Sakurai
patent: 5225702 (1993-07-01), Chatterjee
patent: 5430595 (1995-07-01), Wagner et al.
patent: 5489792 (1996-02-01), Hu et al.
patent: 5517051 (1996-05-01), Chatterjee
patent: 5534722 (1996-07-01), Takasu et al.
patent: 5610790 (1997-03-01), Staab et al.
patent: 5751041 (1998-05-01), Suzuki et al.
IBM Technical Disclosure Bulletin, vol. 16, No. 3, pp. 1027-1029, Aug. 1973 .

Affiliated with

Also associated with

Rating

Electrostatic discharge protection for silicon-on-insulator does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electrostatic discharge protection for silicon-on-insulator, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrostatic discharge protection for silicon-on-insulator will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-365666