Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-12-24
2010-11-23
Wojciechowicz, Edward (Department: 2895)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S173000, C257S358000, C257S363000, C361S056000, C361S091100
Reexamination Certificate
active
07838941
ABSTRACT:
Disclosed is an electrostatic discharge protection device that has a low trigger voltage and protects an internal circuit from electrostatic discharge. The ESD protection device includes an NMOS transistor in which a first pad and a drain are connected to each other and a second pad and a source are connected to each other. A capacitor in which an end is connected to the first pad and the other end is connected to a gate of the NMOS transistor and a substrate contact of the NMOS transistor. The ESD protection devices also includes a resistor in which an end is connected to the second pad and the other end is connected to the capacitor. The first pad may be a power pad and the second pad may be a ground pad. Alternately, the first pad may be an input/output pad and the second pad may be a ground pad.
REFERENCES:
patent: 2004/0233595 (2004-11-01), Ker et al.
patent: 1020000015065 (2000-03-01), None
patent: 1020000060695 (2000-10-01), None
patent: 10-0631955 (2006-09-01), None
patent: 10-0639231 (2006-10-01), None
Hynix / Semiconductor Inc.
Ladas & Parry LLP
Wojciechowicz Edward
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