Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2008-07-08
2008-07-08
Prenty, Mark (Department: 2822)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S362000, C361S091500
Reexamination Certificate
active
11277607
ABSTRACT:
A lateral bipolar transistor is used to protect a passive radio frequency (RF) microelectronic circuit during electrostatic discharge (ESD) events. The microelectronic circuit receives a high frequency differential input signal across first and second pads. The lateral bipolar transistor includes an n-type emitter coupled to the first pad and an n-type collector coupled to the second pad. The emitter and collector are located in a p-well, which forms the base of the transistor. The p-well is located in an isolating n-well, which in turn, is located in a p-type substrate. The n-well is coupled to receive the VDDsupply voltage and the p-substrate is coupled to a VSSreference voltage. A dielectric region can be located between the emitter and collector (in the p-well).
REFERENCES:
patent: 5886386 (1999-03-01), Tailliet
“Zener substrate triggering for CMOS ESD protection devices”, by Y. Blecher & R. Fried, pp. 2102-2103, Electronics Letters, Oct. 24, 1996, vol. 32, No. 22.
Leenaerts et al. “Bond Pad and ESD Protection Structure for 0.25 μm/0.18 μm RF-CMOS”, Proceedings of the 29thEuropean Solid-State Circuits Conference, Sep. 16-18, 2003, pp. 569-572.
Blecher Yaron
Naot Ira
Bever Hoffman & Harms LLP
Hoffman E. Eric
Prenty Mark
Tower Semiconductor Ltd.
LandOfFree
Electrostatic discharge protection device for radio... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Electrostatic discharge protection device for radio..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrostatic discharge protection device for radio... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3909865