Electrostatic discharge protection device for MOS integrated cir

Details Electrostatic discharge protection device for MOS integrated cir Electrostatic discharge protection device for MOS integrated cir

1994-09-21

1995-08-08

Ngo, Ngan V.

Active solid-state devices (e.g., transistors, solid-state diode

Regenerative type switching device

Device protection

257133, 257146, 257361, 257362, 257363, 257379, 257401, H01L 2906, H01L 2978

Patent

active

054401518

ABSTRACT:
The protection device comprises a MOS transistor formed on the substrate of the integrated circuit and connected between a circuit pad and a reference terminal of the integrated circuit. A thyristor formed on the substrate is connected between the pad and the reference terminal. The control electrode of this thyristor consists of a region of the substrate in such a way that the thyristor can be triggerred by a current of charge carriers produced in the substrate by avalanche when a voltage rise occurs between the substrate and the drain of the MOS transistor.

REFERENCES:
patent: 4400711 (1983-08-01), Avery
patent: 4633283 (1986-12-01), Avery
patent: 4692781 (1987-09-01), Rountree et al.
patent: 4694315 (1987-09-01), Svendberg
patent: 4896243 (1990-01-01), Chaterjee et al.
patent: 4939616 (1990-07-01), Rountree
patent: 5012317 (1991-04-01), Rountree
patent: 5272371 (1993-12-01), Bishop et al.
patent: 5291051 (1994-03-01), Hoang et al.
Journal of Electrostatics--vol. 29, N.degree. 1, Dec. 1992, Amsterdam pp. 1-19-C. Duvvury et R. Rountree "A synthesis of ESD input protection scheme".

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