Electrostatic discharge protection device for integrated circuit

Details Electrostatic discharge protection device for integrated circuit Electrostatic discharge protection device for integrated circuit

1997-05-06

1998-01-06

Meier, Stephen

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257356, H01L 2362

Patent

active

057058415

ABSTRACT:
An electrostatic discharge (ESD) protection device includes a drain region and a source region, each having a heavily-doped region and a lightly-doped region, wherein the junction depth of the lightly-doped region is deeper than that of the heavily doped region. Accordingly, the ESD current density will be decreased owing to the enlarged junction area during the ESD event. In addition, the heat dissipation can be spread over the enlarged junction area instead of being focused on the cylindrical portion. Moreover, low parasitic capacitance in the bond pad is achieved because the junction capacitance of the lightly-doped region is smaller than that of the heavily-doped region. Furthermore, conducting blocks are arranged between the lightly-doped regions and the source/drain electrodes, respectively, to prevent the metal melt filament from spiking the junction.

REFERENCES:
patent: 4724471 (1988-02-01), Leuschner
patent: 4893157 (1990-01-01), Miyazawa et al.
patent: 4920445 (1990-04-01), Jun
patent: 5293057 (1994-03-01), Ho et al.
patent: 5455436 (1995-10-01), Chong
patent: 5498892 (1996-03-01), Walker et al.
patent: 5521413 (1996-05-01), Narita

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