Electrostatic discharge protection device for integrated circuit

Details Electrostatic discharge protection device for integrated circuit Electrostatic discharge protection device for integrated circuit

1995-06-06

1997-08-05

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257173, 257327, 257360, 257357, 361 56, 361 91, 361111, 327313, H01L 2362

Patent

active

056545746

ABSTRACT:
An electrostatic discharge (ESD) device includes a pair of depletion mode MOSFETs connected drain-to-drain in a series path between an input terminal and an output terminal, the gate of each MOSFET being connected to its source. A first diode having a relatively high breakdown voltage is connected between ground and the common drain terminal of the MOSFETs, and a second diode having a relatively low breakdown voltage is connected between ground and the output terminal of the device. The second diode breaks down during a relatively low, long-lived voltage spike (in an automobile, sometimes referred to as a "load dump"), while the second MOSFET saturates, limiting the size of the current through the second diode. The first diode breaks down during a large voltage spike of short duration, such as occurs from an ESD.

REFERENCES:
patent: 5060037 (1991-10-01), Rountree
Radio Fernsehen Electronik, vol. 42, No. 2, pp. 61, Xp 000407295 `Announcement` Feb. 1, 1993.

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