Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-10-23
2007-10-23
Menz, Douglas M. (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S355000, C257S362000
Reexamination Certificate
active
11330139
ABSTRACT:
An electrostatic discharge (ESD) device and method is provided. The ESD device can comprise a substrate doped to a first conductivity type, an epitaxial region doped to the second conductivity type, and a first well doped to the first conductivity type disposed in the substrate. The first well can comprise a first region doped to the first conductivity type, a second region doped to a second conductivity type, and a first isolation region disposed between the first region and the second region. The ESD device can also comprise a second well doped to a second conductivity type disposed in the substrate adjacent to the first well, where the second well can comprise a third region doped to the first conductivity type, a fourth region doped to the second conductivity type, and a second isolation region disposed between the third region and the fourth region. Still further, the ESD device can include a first trigger contact and second trigger contact comprising highly doped regions of either conductivity type, the first trigger contact disposed at a junction between the first well and the second well, and the second trigger contact disposed at either well.
REFERENCES:
patent: 4896243 (1990-01-01), Chatterjee et al.
patent: 5343053 (1994-08-01), Avery
patent: 5369041 (1994-11-01), Duvvury
patent: 5453384 (1995-09-01), Chatterjee
patent: 5455436 (1995-10-01), Cheng
patent: 5670799 (1997-09-01), Croft
patent: 5856214 (1999-01-01), Yu
patent: 5872379 (1999-02-01), Lee
patent: 6081002 (2000-06-01), Amerasekera et al.
patent: 6433979 (2002-08-01), Yu
patent: 6465848 (2002-10-01), Ker et al.
patent: 6566715 (2003-05-01), Ker et al.
Ker et al., “Substrate-Triggered SCR Device for On-Chip ESD Protection in Fully Silicided Sub-0.25-μm CMOS Process,”IEEE Transaction on Electron Devices, vol. 50, No. 2, Feb. 2003.
Salcedo et al., “Novel and Robust Silicon Controlled Rectifier (SCR) Based Devices for On-Chip ESD Protection,”IEEE Electron Device Letters, vol. 25, No. 9, Sep. 2004.
Bernier Joseph C.
Liou Juin J.
Salcedo Javier A.
Whitney Donald K.
Intersail Americas Inc.
Menz Douglas M.
MH2 Technology Law Group LLP
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