Electrostatic discharge protection device for an integrated...

Details Electrostatic discharge protection device for an integrated... Electrostatic discharge protection device for an integrated...

2007-07-26

2010-11-30

Lebentritt, Michael S (Department: 2829)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S357000, C257S361000, C257SE29217, C257SE29225, C257SE29337, C438S133000, C438S135000, C438S137000, C438S140000, C438S416000

Reexamination Certificate

active

07843009

ABSTRACT:
An integrated circuit is made of a semiconductor material and comprises an input and/or terminal connected to an output transistor forming a parasitic element capable of triggering itself under the effect of an electrostatic discharge applied to the terminal. The integrated circuit comprises a protection device formed so as to be biased at the same time as the parasitic element under the effect of an electrostatic discharge, and more than the parasitic element to evacuate a discharge current as a priority.

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