Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-01-31
2009-06-30
Vu, David (Department: 2818)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257SE21633, C438S133000, C361S220000
Reexamination Certificate
active
07554159
ABSTRACT:
An electrostatic discharge protection device that includes a semiconductor substrate of a first dopant type, at least one source/drain pair of a second dopant type formed in the substrate, wherein the source/drain pair is separated to define a channel region therebetween, a lightly-doped region of the first dopant type defined between the source/drain pair and including at least a portion of the channel region, a gate dielectric layer formed over the substrate, and a gate formed over the gate dielectric layer and above the channel region.
REFERENCES:
patent: 4692781 (1987-09-01), Rountree et al.
patent: 5400202 (1995-03-01), Metz et al.
patent: 5452171 (1995-09-01), Metz et al.
patent: 5510279 (1996-04-01), Chien et al.
patent: 5517051 (1996-05-01), Chatterjee
patent: 5572394 (1996-11-01), Ker et al.
patent: 5576574 (1996-11-01), Hong
patent: 5631793 (1997-05-01), Ker et al.
patent: 5646054 (1997-07-01), Rhee
patent: 5646808 (1997-07-01), Nakayama
patent: 5698884 (1997-12-01), Dennen
patent: 5734541 (1998-03-01), Iniewski et al.
patent: 5740000 (1998-04-01), Stackhouse et al.
patent: 5744842 (1998-04-01), Ker
patent: 5747834 (1998-05-01), Chen et al.
patent: 5763919 (1998-06-01), Lin
patent: 5838146 (1998-11-01), Singer
patent: 5982600 (1999-11-01), Cheng
patent: 6147383 (2000-11-01), Kuroda
patent: 6147538 (2000-11-01), Andresen et al.
patent: 6211023 (2001-04-01), Yeh et al.
patent: 6239472 (2001-05-01), Shenoy
patent: 6256184 (2001-07-01), Gauthier, Jr. et al.
patent: 6362062 (2002-03-01), Nandakumar
patent: 6426291 (2002-07-01), Hu et al.
patent: 6465311 (2002-10-01), Shenoy
patent: 6528850 (2003-03-01), Hebert
patent: 6546522 (2003-04-01), Chen
patent: 6671153 (2003-12-01), Ker et al.
patent: 6822297 (2004-11-01), Nandakumar et al.
Chang Chyh-Yih
Jiang Hsin-Chin
Ker Ming-Dou
Peng Jeng-Jie
Tseng Tang-Kui
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