Electrostatic discharge protection device and method of...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257SE21633, C438S133000, C361S220000

Reexamination Certificate

active

07554159

ABSTRACT:
An electrostatic discharge protection device that includes a semiconductor substrate of a first dopant type, at least one source/drain pair of a second dopant type formed in the substrate, wherein the source/drain pair is separated to define a channel region therebetween, a lightly-doped region of the first dopant type defined between the source/drain pair and including at least a portion of the channel region, a gate dielectric layer formed over the substrate, and a gate formed over the gate dielectric layer and above the channel region.

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