Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer
Reexamination Certificate
2008-07-15
2008-07-15
Doan, Theresa T. (Department: 2814)
Semiconductor device manufacturing: process
Making field effect device having pair of active regions...
On insulating substrate or layer
C438S479000, C257S347000
Reexamination Certificate
active
11781370
ABSTRACT:
A silicon control rectifier, a method of making the silicon control rectifier and the use of the silicon control rectifier as an electrostatic discharge protection device of an integrated circuit. The silicon control rectifier includes a silicon body formed in a silicon layer in direct physical contact with a buried oxide layer of a silicon-on-insulator substrate, a top surface of the silicon layer defining a horizontal plane; and an anode of the silicon control rectifier formed in a first region of the silicon body and a cathode of the silicon control rectifier formed in an opposite second region of the silicon body, wherein a path of current flow between the anode and the cathode is only in a single horizontal direction parallel to the horizontal plane.
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Gauthier Jr. Robert J.
Li Junjun
Mitra Souvick
Mousa Mahmoud A.
Putnam Christopher Stephen
Canale Anthony J.
Doan Theresa T.
Salerno Sarah K
Schmeiser Olsen & Watts
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