Electrostatic discharge protection device and method of...

Semiconductor device manufacturing: process – Making field effect device having pair of active regions... – On insulating substrate or layer

Reexamination Certificate

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C438S479000, C257S347000

Reexamination Certificate

active

11781370

ABSTRACT:
A silicon control rectifier, a method of making the silicon control rectifier and the use of the silicon control rectifier as an electrostatic discharge protection device of an integrated circuit. The silicon control rectifier includes a silicon body formed in a silicon layer in direct physical contact with a buried oxide layer of a silicon-on-insulator substrate, a top surface of the silicon layer defining a horizontal plane; and an anode of the silicon control rectifier formed in a first region of the silicon body and a cathode of the silicon control rectifier formed in an opposite second region of the silicon body, wherein a path of current flow between the anode and the cathode is only in a single horizontal direction parallel to the horizontal plane.

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