Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2007-11-20
2007-11-20
Doan, Theresa (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S119000, C257S356000, C257S357000, C257S365000, C257S369000
Reexamination Certificate
active
11275638
ABSTRACT:
Disclosed are a silicon control rectifier, a method of making the silicon control rectifier and the use of the silicon control rectifier as an electrostatic discharge protection device of an integrated circuit. The silicon control rectifier includes a silicon body formed in a silicon layer in direct physical contact with a buried oxide layer of a silicon-on-insulator substrate, a top surface of the silicon layer defining a horizontal plane; and an anode of the silicon control rectifier formed in a first region of the silicon body and a cathode of the silicon control rectifier formed in an opposite second region of the silicon body, wherein a path of current flow between the anode and the cathode is only in a single horizontal direction parallel to the horizontal plane.
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Gauthier Jr. Robert J.
Li Junjun
Mitra Souvick
Mousa Mahmoud A.
Putnam Christopher Stephen
Canale Anthony J.
Doan Theresa
Harding Sarah K
International Business Machines - Corporation
Schmeiser Olsen & Watts
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