Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-04-19
2005-04-19
Blum, David S. (Department: 2813)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S356000, C257S408000
Reexamination Certificate
active
06882009
ABSTRACT:
An electrostatic discharge protection device that includes a semiconductor substrate of a first dopant type, at least one source/drain pair of a second dopant type formed in the substrate, wherein the source/drain pair is separated to define a channel region therebetween, a lightly-doped region of the first dopant type defined between the source/drain pair and including at least a portion of the channel region, a gate dielectric layer formed over the substrate, and a gate formed over the gate dielectric layer and above the channel region.
REFERENCES:
patent: 5698884 (1997-12-01), Dennen
patent: 6147383 (2000-11-01), Kuroda
patent: 6239472 (2001-05-01), Shenoy
patent: 6256184 (2001-07-01), Gauthier Jr. et al.
patent: 6465311 (2002-10-01), Shenoy
patent: 6528850 (2003-03-01), Hebert
Chang Chyh-Yih
Jiang Hsin-Chin
Ker Ming-Dou
Peng Jeng-Jie
Tseng Tang-Kui
Blum David S.
Finnegan Henderson Farabow Garrett & Dunner L.L.P.
Industrial Technology Research Institute
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