Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-05-13
1998-07-07
Jackson, Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257356, 257361, 257362, H01L 2362, H01L 2941
Patent
active
057773688
ABSTRACT:
An electrostatic discharge (ESD) protection device includes a drain region and a source region, each having a heavily-doped region and a lightly-doped region, wherein the junction depth of the lightly-doped region is deeper than that of the heavily doped region. Accordingly, the ESD current density will be decreased owing to the enlarged junction area during the ESD event. In addition, the heat dissipation can be spread over the enlarged junction area instead of being focused on the drain cylindrical edge. Moreover, low parasitic capacitance in the bond pad is achieved because the junction capacitance of the lightly-doped region is smaller than that of the heavily-doped region. Furthermore, conducting blocks are arranged between the lightly-doped regions and the source/drain electrodes, respectively, to prevent the metal melt filament from spiking the junction.
REFERENCES:
patent: 5027252 (1991-06-01), Yamamura
patent: 5293057 (1994-03-01), Ho et al.
patent: 5502317 (1996-03-01), Duvvury
patent: 5576557 (1996-11-01), Kerr et al.
Wang Alex
Wu Chau-Neng
Yu Ta-Lee
Jackson Jerome
Winbond Electronics Corp.
LandOfFree
Electrostatic discharge protection device and its method of fabr does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Electrostatic discharge protection device and its method of fabr, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrostatic discharge protection device and its method of fabr will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-1209129