Electrostatic discharge protection device and a method for simul

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

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257408, 361 91, H01L 2906, H01L 2910

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active

052084752

ABSTRACT:
An electrostatic discharge protection circuit having a non-lightly doped drain MOS device for protecting other lightly doped drain devices on an integrated circuit, and a method of concurrently fabricating both the non lightly doped and lightly doped devices on the substrate of the integrated circuit using substantially the same set of processing steps.

REFERENCES:
patent: 4692834 (1987-09-01), Iwahashi et al.
patent: 4811155 (1989-03-01), Kuriyama et al.
patent: 4829350 (1989-05-01), Miller
patent: 4855620 (1989-08-01), Duvvury et al.
Microelectronic Devices, McGraw-Hill 1988 pp. 292-294 by Yang.

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