Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1991-01-30
1993-05-04
Prenty, Mark V.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257408, 361 91, H01L 2906, H01L 2910
Patent
active
052084752
ABSTRACT:
An electrostatic discharge protection circuit having a non-lightly doped drain MOS device for protecting other lightly doped drain devices on an integrated circuit, and a method of concurrently fabricating both the non lightly doped and lightly doped devices on the substrate of the integrated circuit using substantially the same set of processing steps.
REFERENCES:
patent: 4692834 (1987-09-01), Iwahashi et al.
patent: 4811155 (1989-03-01), Kuriyama et al.
patent: 4829350 (1989-05-01), Miller
patent: 4855620 (1989-08-01), Duvvury et al.
Microelectronic Devices, McGraw-Hill 1988 pp. 292-294 by Yang.
National Semiconductor Corporation
Prenty Mark V.
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