Electrostatic discharge protection device

Details Electrostatic discharge protection device Electrostatic discharge protection device

2006-07-25

2009-02-03

Tran, Long K (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

C257S273000, C257S305000, C257S307000, C257SE29174, C257SE29176, C257SE27015, C257SE27017, C257SE27109, C257SE21619, C438S305000, C438S307000

Reexamination Certificate

active

07485905

ABSTRACT:
An electrostatic discharge protection device comprising a multi-finger gate, a first lightly doped region of a second conductivity, a first heavily doped region of the second conductivity, and a second lightly doped region of the second conductivity. The multi-finger gate comprises a plurality of fingers mutually connected in parallel over an active region of a first conductivity. The first lightly doped region of a second conductivity is disposed in the semiconductor substrate and between two of the fingers. The first heavily doped region of the second conductivity is disposed in the first lightly doped region of the second conductivity. The second lightly doped region of the second conductivity is beneath and adjoins the first lightly doped region of the second conductivity.

REFERENCES:
patent: 6747312 (2004-06-01), Boden, Jr.
patent: 6929995 (2005-08-01), Chen
patent: 2006/0121681 (2006-06-01), Nandakumar

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