Electrostatic discharge protection device

Details Electrostatic discharge protection device Electrostatic discharge protection device

2007-12-18

2007-12-18

Huynh, Andy (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S107000, C257S328000, C257S335000, C257SE29181

Reexamination Certificate

active

11270960

ABSTRACT:
An electrostatic discharge (ESD) protection device is provided. The apparatus includes: a double diffused drain N-type metal oxide semiconductor field effect transistor (MOSFET); a P-type silicon controlled rectifier (SCR); a double diffused drain P-type MOSFET; and an N-type SCR, wherein: the double diffused drain N-type MOSFET is connected in parallel with the P-type SCR between an output pad and a first voltage pad; the double diffused drain P-type MOSFET is connected in parallel with the N-type SCR between the output pad and a second voltage pad; and the N-type SCR is connected in parallel with the P-type SCR between the first voltage pad and the second voltage pad.

REFERENCES:
patent: 6850397 (2005-02-01), Russ et al.
patent: 2006/0097321 (2006-05-01), Kim
patent: 2002-0013701 (2002-02-01), None
patent: 10-2004-0082832 (2004-09-01), None

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