Electrostatic discharge protection device

Details Electrostatic discharge protection device Electrostatic discharge protection device

2006-10-31

2006-10-31

Jackson, Jerome (Department: 2815)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S339000, C257S357000, C257S401000

Reexamination Certificate

active

07129546

ABSTRACT:
An ESD protection device. The ESD protection device has a substrate; a channel region, a source region, and a drain region. The channel region is formed on a predetermined area of a surface of the substrate, the channel region has a first side and a second side. The source region is formed adjacent to the first side. The drain region which has a heavily doped region and a lightly doped region formed below the heavily doped region is formed adjacent to the second side. The width along a longitudinal axis of the heavily doped region has variable length and thus the length between one side of the heavily doped region to the second side has variable length.

REFERENCES:
patent: 5742083 (1998-04-01), Lin
patent: 5763919 (1998-06-01), Lin
patent: 5882967 (1999-03-01), Brown et al.
patent: 5910677 (1999-06-01), Irino
patent: 6258672 (2001-07-01), Shih et al.
patent: 6291862 (2001-09-01), Chevallier
patent: 6424013 (2002-07-01), Steinhoff et al.
patent: 6552399 (2003-04-01), Jun et al.
patent: 6576934 (2003-06-01), Cheng et al.
patent: 6653709 (2003-11-01), Wu et al.
patent: 6661060 (2003-12-01), Lee et al.
patent: 6759691 (2004-07-01), Chen
patent: 6825504 (2004-11-01), Ishizuka et al.
patent: 6936896 (2005-08-01), Ida et al.

Affiliated with

Also associated with

Rating

Electrostatic discharge protection device does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Electrostatic discharge protection device, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Electrostatic discharge protection device will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-3664329