Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-07-04
2006-07-04
Jackson, Jerome (Department: 2815)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S586000, C257S579000, C257SE23013, C361S091500
Reexamination Certificate
active
07071514
ABSTRACT:
A compact ESD protection device is described that uses the reverse breakdown voltage of a base-emitter junction as a trigger diode to switch a transistor that shunts the forward bias ESD current to ground. The trigger diode in series with a leakage diode provides a path to shunt the reverse bias ESD current to ground. The leakage diode is matched to the trigger diode to shunt any leakage current from the trigger diode to ground.
REFERENCES:
patent: 6724067 (2004-04-01), Bayraktaroglu
patent: 2002/0060327 (2002-05-01), Chen et al.
patent: 2004/0169234 (2004-09-01), Yu
patent: 2004/0195597 (2004-10-01), Torvik et al.
Anadigics Inc.
Budd Paul
Jackson Jerome
Morgan & Lewis & Bockius, LLP
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