Electrostatic discharge protection device

Details Electrostatic discharge protection device Electrostatic discharge protection device

2005-02-01

2005-02-01

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S350000, C257S355000, C257S372000

Reexamination Certificate

active

06849907

ABSTRACT:
An electrostatic discharge (ESD) protection device. The ESD protection device includes a first parasitic bipolar transistor, a second parasitic bipolar transistor, a third parasitic bipolar transistor and a fourth parasitic bipolar transistor formed over a substrate. A first longitudinal doped region is formed between the first parasitic bipolar transistor and the second parasitic bipolar transistor. Similarly, a second longitudinal doped region is formed between the third parasitic bipolar transistor and the fourth parasitic bipolar transistor. A guard ring circumscribes the substrate. An isolation region is formed inside the guard ring. All collectors of the parasitic bipolar transistors are connected to an anode terminal. The guard ring, the first/second longitudinal doped regions and all emitters of the parasitic bipolar transistors are connected to a cathode terminal.

REFERENCES:
patent: 5744842 (1998-04-01), Ker
patent: 6274909 (2001-08-01), Chang et al.
patent: 6420221 (2002-07-01), Lee et al.
patent: 6469354 (2002-10-01), Hirata
patent: 6621133 (2003-09-01), Chen et al.

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