Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2005-07-05
2005-07-05
Ngô, Ngân V. (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S356000
Reexamination Certificate
active
06914306
ABSTRACT:
An electrostatic discharge (ESD) protection device is provided. The ESD protection device includes a substrate, a first and a second doped region formed in the substrate. The first and second doped regions are separated from each other by only the substrate region. The ESD protection device includes no gate above the first and second doped regions. Furthermore, the distance separating the first and second doped regions is defined by a length of a resist during a process of forming the ESD protection device.
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Micro)n Technology, Inc.
Ngo Ngan V.
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