Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-09-17
1999-07-13
Hardy, David B.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257360, 257378, H01L 2362
Patent
active
059230681
ABSTRACT:
Electrostatic discharge protection device is provided that protects the gate insulating layer without using an additional circuit to lower the trigger voltage of a thyristor. The electrostatic discharge protection device includes first and second impurity regions of a bipolar transistor being spaced a predetermined distance apart in a first conductivity type semiconductor substrate, and first and second impurity regions of a field transistor perpendicular to and along both sides of the first and second impurity regions of the bipolar transistor. A gate line formed between the first and second impurity regions of the bipolar transistor on the semiconductor substrate is coupled to one of the impurity regions of the field transistor. A Vss line is coupled to the other impurity region of the field transistor. The Vss line is also coupled to the first impurity region of the bipolar transistor. A metal layer is coupled to the first impurity region of the bipolar transistor and a pad.
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Jeffrey T. Watt et al., "A Hot-Carrier Triggered SCR for Smart Power Bus ESD Protection;" 1995 IEEE Electron Device Letters, vol. 12, No. 1, Jan. 1991.
Chatterjee et al., "A Low-Voltage Triggering SCR for On-Chip ESD Protection at Output and Input Pads," IEEE Electron Device Letters, vol. 12, No. 1, Jan. 1991.
Huh Yun Jong
Lee Hyeok Jae
Hardy David B.
LG Semicon Co. Ltd.
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