Electrostatic discharge protection device

Details Electrostatic discharge protection device Electrostatic discharge protection device

1994-09-14

1996-04-02

Larkins, William D.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257361, 257370, H01L 2706

Patent

active

055043623

ABSTRACT:
A thick-oxide ESD transistor for a BiCMOS integrated circuit has its source/drain contacts formed of the BiCMOS base or emitter polysilicon and its source/drain formed by an outdiffusion of the respective polysilicon contact. In one embodiment the BiCMOS resistor doping deepens the ESD source/drains, and in another embodiment the BiCMOS collector reach through doping deepens the ESD source/drains. The entire ESD transistor is fabricated from a standard BiCMOS process without any additional steps, has an area of about 100 square microns, can shunt up to 6000 volts, and has a turn-on time of about 10 picoseconds.

REFERENCES:
patent: 4692781 (1987-09-01), Rountree
patent: 4745450 (1990-05-01), Hartranft
patent: 4952994 (1990-08-01), Lin
patent: 5017985 (1991-05-01), Lin
patent: 5021853 (1991-06-01), Kalzad
patent: 5124775 (1992-06-01), Iranmanesh
patent: 5268587 (1993-12-01), Murata et al.
Thick Oxide Device ESD Performance UnderProcess Variations, R. A. McPhee, C. Duvvury, et al. 1986 EOS Synosium Proceedings, pp. 173-181.
The Elimination of Electrostatic Discharge Failures From Silicon Gate Logic Tech., R. B. Wilcox et al., EOS/ESD Symposium Proceedings, 1985, pp. 1-4.
A Summary Of Most Effective Electrostatic Discharge Protection Circuits For MOS Memories and Their Observed Failure Modes. C. Duvvury, et al. EOS/ESD Symposium Proceedings, 1983, pp. 181-184.

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