Electrostatic discharge protection circuit with a diode string

Details Electrostatic discharge protection circuit with a diode string Electrostatic discharge protection circuit with a diode string

2005-11-08

2005-11-08

Nelms, David (Department: 2818)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S365000, C257S357000

Reexamination Certificate

active

06963112

ABSTRACT:
An electrostatic discharge (ESD) protection circuit is disclosed for preventing a pad-to-pad ESD charge. The protection circuit for each pad of an integrated circuit comprises a current dissipation module with an N-type MOSFET connected in parallel with a bipolar junction transistor (BJT) wherein the drain of the MOSFET and the collector of the BJT are connected to a first common node and the source of the MOSFET and the emitter of the BJT are connected to a second common node connectable to a second operating voltage. A diode string is connected to a first pad at its anode end having a total forward voltage drop more than a first operating voltage and with its cathode end connected to the body of the MOSFET, the base of the BJT, and to the second common node through a resistor.

REFERENCES:
patent: 5239440 (1993-08-01), Merrill
patent: 5568346 (1996-10-01), Orchard-Webb
Ker, Ming-Dou et al., “Capacictor-Couple ESD Protection Circuit for Deep-Submicron Low-Voltage CMOS ASIC”, IEEE Transactions on Very Large Scale Integration (VLSI) Systems, vol. 4, No. 3, (Sep. 1996), pp. 307-321.
Ker, Ming-Dou et al., “Complementary-SCR ESD Protection Circuit with Interdigitated Finger-Type Layout for Input Pads of Submicron CMOS IC'S”, IEEE Transactions in Electron Devices, vol. 42, No. 7, (Jul. 1995), pp. 1297-1304.
Wu et al., A New On-Chip ESD Protection Circuit with Dual Parasitic SCR Structures for CMOS VLSI, IEEE Journal of Solid-State Circuits, vol. 27, No. 3, (Mar. 1992), pp. 274-280.

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