Electrostatic discharge protection circuit of non-gated...

Details Electrostatic discharge protection circuit of non-gated... Electrostatic discharge protection circuit of non-gated...

2005-08-23

2005-08-23

Coleman, W. David (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

Reexamination Certificate

active

06933573

ABSTRACT:
A non-gated diode structure of a silicon-on-insulator, having a silicon-on-insulator substrate, a pair of isolating structures, a first type doped region and a second type doped region. The silicon-on-insulation substrate has a stack of a substrate, an insulation layer and a silicon layer. The isolating structures are located in the silicon layer to define a well region. The first and second type doped regions are located in the well and are adjacent to the isolating structures. Such a non-gated diode structure can be applied to an electrostatic discharge protection circuit to increase the electrostatic discharge protection voltage or current. In addition, a fabrication method of the non-gated diode is also introduced. This non-gated diode can be also fabricated in the general bulk CMOS process, and used in the on-chip ESD protection circuits.

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