Electrostatic discharge protection circuit having eprom

Details Electrostatic discharge protection circuit having eprom Electrostatic discharge protection circuit having eprom

1998-05-05

1999-02-09

Loke, Steven H.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257363, 257355, 257357, 361 90, 361 91, 361 56, 361 58, H01L 2362, H02H 320, H02H 904, H02H 900

Patent

active

058698736

ABSTRACT:
An electrostatic discharge protection circuit protects an internal circuit that is coupled to a pad from electrostatic discharge damage. The electrostatic discharge protection circuit comprises a PNP transistor, a NPN transistor, and an erasable programmable read only memory. The PNP and NPN transistors have an emitter, a base, and a collector, respectively. The PNP transistor is configured with its emitter connected to the pad, its base connected to the collector of the NPN transistor, and its collector connected to the base of the NPN transistor. The emitter of the NPN transistor is connected to a circuit node. The erasable programmable read only memory is configured with a drain connected to the base of the PNP transistor, a source connected to the circuit node, and a control gate coupled to the circuit node. When electrostatic discharge stress occurs at the pad, the erasable programmable read only memory enters breakdown to be programmed and triggers the conduction of the transistors.

REFERENCES:
patent: 5400202 (1995-03-01), Metz et al.
patent: 5465189 (1995-11-01), Polgreen et al.

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