Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1992-08-14
1994-03-08
Mintel, William
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257361, 257362, 257363, H01L 2972
Patent
active
052930572
ABSTRACT:
An ESD protection circuit (38) for a MOS device uses at least one electrically floating-base N+P-N+ transistor (43) connected between a metal bonding pad (40) and ground. The electrically floating base region (44) of each transistor is formed by a thin oxide region deposited over a substrate (50) of the MOS device. Because its N+ regions (42, 45) are made symmetrical about the floating base, each transistor conducts ESD pulses of both polarities equally. The beta of each transistor is made sufficiently large to withstand short-duration ESD current spikes. Current density is minimized by diffusing a deep N- well (54, 56) into each N+ region of each transistor to provide a larger effective conducting area. Low capacitance and higher breakdown voltage are achieved by eliminating the gate structure of prior art FET-based protection circuits.
REFERENCES:
patent: 4692781 (1987-09-01), Rountree et al.
patent: 4924339 (1990-05-01), Atsumi et al.
patent: 4994874 (1991-02-01), Shimizu et al.
patent: 5043782 (1991-08-01), Avery
patent: 5218222 (1993-06-01), Roberts
Daher Mitchel A.
Ho Fan
Micro)n Technology, Inc.
Mintel William
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