Electrostatic discharge protection circuit employing MOSFETs hav

Details Electrostatic discharge protection circuit employing MOSFETs hav Electrostatic discharge protection circuit employing MOSFETs hav

1999-04-30

2000-03-21

Monin, Jr., Donald L.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257345, 257546, H01L 21336

Patent

active

060406038

ABSTRACT:
A transistor formed in a semiconductor substrate having improved ESD protection is disclosed. The transistor includes a first ESD implant formed underneath the source region and the drain region of the transistor. The first ESD implant has the same impurity type as the source region and the drain region. Further, a second ESD implant is formed underneath the first ESD implant, the second ESD implant having an impurity type opposite to that of said first ESD implant. The second ESD implant also is spaced apart vertically from the first ESD implant.

REFERENCES:
patent: 5440165 (1995-08-01), Mitsunaga et al.
patent: 5466957 (1995-11-01), Yuki et al.
patent: 5512770 (1996-04-01), Hong
patent: 5903029 (1999-05-01), Hayashida et al.

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