Electrostatic discharge protection circuit employing a mosfet de

Details Electrostatic discharge protection circuit employing a mosfet de Electrostatic discharge protection circuit employing a mosfet de

1996-01-05

1996-08-06

Limanek, Robert P.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257361, 257362, 327432, 327566, H01L 2978

Patent

active

055436501

ABSTRACT:
An electrostatic discharge protection device for protecting the input of a circuit comprises a p-channel MOSFET (P-FET). The n-well with P+ implants of the P-FET provides a functional lateral PNP bipolar transistor that is coupled between the input of the circuit and a supply node of the circuit. Biasing circuitry controls biasing of the gate and n-well body of the P-FET in accordance with the voltage at the input of the circuit.

REFERENCES:
patent: 4760433 (1988-07-01), Young et al.
patent: 5003362 (1991-03-01), Lee et al.
patent: 5032742 (1991-07-01), Zanders
patent: 5036215 (1991-07-01), Masleid et al.
patent: 5148250 (1992-09-01), Winnerl et al.
patent: 5229635 (1993-07-01), Bessolo et al.
patent: 5291051 (1994-03-01), Hoang et al.

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