Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-11-03
1999-08-10
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257197, 257355, 257591, 257592, 257546, H01L 2362, H01L 27082, H01L 27102, H01L 2970
Patent
active
059362847
ABSTRACT:
A circuit protects against electrostatic discharge and includes a transistor connected to the circuit to be protected. A semiconductor body of a first conductivity type serves as the collector. A first doped region of a second conductivity type is contained in the semiconductor body and serves as the base. A second doped region of the first conductivity type is contained in the first doped region and serves as the emitter. The first doped region includes a generally H-shaped doped region and a generally ring-shaped doped region forming an opening in which the second doped region serving as the emitter is received. The H-shaped doped region has a deeper junction surface than the junction surface of the ring-shaped doped region, and a dopant concentration that is less than the dopant concentration of the ring-shaped doped region. The H-shaped doped region achieves a low collector-to-base breakdown voltage and the ring-shaped doped region achieves a low snap-back voltage. A method for forming the transistor is also disclosed.
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Fenty Jesse A.
Saadat Mahshid
SGS--Thomson Microelectronics S.r.l.
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