Electrostatic discharge protection circuit and semiconductor...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S360000, C257SE29169

Reexamination Certificate

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07087968

ABSTRACT:
An ESD protection circuit is adapted for an integrated circuit with a first power source and a second power source. The ESD protection circuit comprises a first silicon controlled rectifier (SCR), a second silicon controlled rectifier, and a parasitic diode. The gate of the first silicon controlled rectifier is coupled to a first power source, and the gate of the second silicon controlled rectifier is also coupled to the first power source line.

REFERENCES:
patent: 6002568 (1999-12-01), Ker et al.
patent: 6011681 (2000-01-01), Ker et al.
patent: 6720623 (2004-04-01), Chen
patent: 6762439 (2004-07-01), Chen et al.
patent: 6949802 (2005-09-01), Shih et al.
patent: 2005/0145947 (2005-07-01), Russ et al.

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