Electrostatic discharge protection circuit and driving...

Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode

Reexamination Certificate

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C257S356000, C257S360000, C257S358000, C361S111000

Reexamination Certificate

active

07420251

ABSTRACT:
An exemplary ESD protection circuit includes first and second sets of transistors and an ESD discharge transistor. Each of the transistors includes a source electrode, a drain electrode, and a gate electrode. The drain electrodes and gate electrodes of each of the transistors are connected to each other, and the source electrodes of the transistors are respectively connected to the drain electrodes of the next adjacent transistors in both sets of the transistors. The gate electrode of the ESD transistor, the source electrodes of last transistors of the first and second sets of the transistors are connected to each other, the source electrode of the ESD transistor is connected to the drain electrode of a first transistor of the first set of the transistors, and the drain electrode of the ESD transistor is connected to the drain electrode of a first transistor of the second set of the transistors.

REFERENCES:
patent: 6043971 (2000-03-01), Song et al.
patent: 6175394 (2001-01-01), Wu et al.
patent: 6411485 (2002-06-01), Chen et al.

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