Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-12-19
1999-03-30
Crane, Sara
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257355, 257362, 257556, H01L 2362
Patent
active
058893091
ABSTRACT:
An electrostatic discharge protection circuit formed in a semiconductor substrate includes a vertical bipolar junction transistor having a base which is grounded, an emitter connected to an output/input bonding pad of an integrated circuit, and a collector connected to a high power source via a resistor. The resistor is a parasitic resistor created by controlling the distance between the diffusion regions or the distance between a p-type well region and an n-type well region or formed by a lightly doped diffusion region in the semiconductor substrate to prevent current crowding and increase electrostatic protection.
REFERENCES:
patent: 4903093 (1990-02-01), Ide et al.
patent: 5158899 (1992-10-01), Yamagata
patent: 5235201 (1993-08-01), Honna
patent: 5272097 (1993-12-01), Shiota
patent: 5290724 (1994-03-01), Leach
patent: 5304839 (1994-04-01), Chen et al.
patent: 5336908 (1994-08-01), Roberts
patent: 5430595 (1995-07-01), Wagner et al.
patent: 5432368 (1995-07-01), Jimenez
patent: 5438213 (1995-08-01), Taillet
patent: 5455436 (1995-10-01), Cheng
patent: 5473169 (1995-12-01), Ker et al.
patent: 5637900 (1997-06-01), Ker et al.
S-T Lin Frank
Wu Chau-Neng
Yeh Ling-Yen
Young Konrad
Yu Ta-Lee
Crane Sara
Windbond Electronics Corp.
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