Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1997-12-31
2000-05-09
Monin, Jr., Donald L.
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257361, 257491, H01L 2362
Patent
active
060607521
ABSTRACT:
An electrostatic discharge (ESD) protection circuit includes diodes connected in series back-to-back between the signal input and power supply terminals of the circuit to be protected. This allows the input signal to rise a selected distance above the supply voltage without triggering the ESD protection circuit. The ESD protection circuit can be fabricated in integrated form, with the diodes including a pair of P+ regions in an N-well or separate P+ regions forming PN junctions with separate N-wells. The diodes may also be formed in a layer of polysilicon over a field oxide region. Optionally, a second pair of back-to-back diodes can be connected between the signal input terminal and ground. This permits the input signal to fall a selected distance below ground without triggering the ESD protection circuit.
REFERENCES:
patent: 5510947 (1996-04-01), Pellegrini et al.
patent: 5736779 (1998-04-01), Kobayashi
Monin, Jr. Donald L.
Siliconix Incorporated
Steuber David E.
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