Electrostatic discharge protection circuit

Details Electrostatic discharge protection circuit Electrostatic discharge protection circuit

1998-05-14

1999-08-03

Hardy, David B.

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

257316, H01L 2362

Patent

active

059329165

ABSTRACT:
The ESD protection circuit disclosed, including: a second conductivity of well formed in a predetermined portion of a first conductivity of semiconductor substrate; a first conductivity of first impurity region and second conductivity of second impurity region, formed in the second conductivity of well; a first gate electrode formed on the semiconductor substrate, and second gate electrode formed on the first gate electrode, the first gate electrode being isolated from the semiconductor substrate; second conductivity of third and fourth impurity regions, formed in a portion of the semiconductor substrate, the portion being placed on both sides of the first and second gate electrodes; and a second conductivity of fifth impurity region formed on the semiconductor substrate, the fourth and fifth impurity regions having an isolation layer therebetween.

REFERENCES:
patent: 5465189 (1995-11-01), Polgreen et al.
patent: 5869873 (1999-02-01), Yu

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