Electrostatic discharge protection circuit

Details Electrostatic discharge protection circuit Electrostatic discharge protection circuit

2005-03-08

2005-03-08

Nadav, Ori (Department: 2811)

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Having insulated electrode

C257S358000, C257S363000, C257S401000

Reexamination Certificate

active

06864536

ABSTRACT:
An electrostatic discharge (ESD) protection device includes a semiconductor layer, a source region formed in the layer, a drain region formed in the layer, a channel region in the layer between the source and drain regions, and a gate over the channel region. A plurality of current divider segments are distributed on the drain region and extend between the gate and drain contacts. The segments can be formed of polysilicon or a field oxide.

REFERENCES:
patent: 5248892 (1993-09-01), Van Roozendaal et al.
patent: 5721439 (1998-02-01), Lin
patent: 5742083 (1998-04-01), Lin
patent: 5763919 (1998-06-01), Lin
patent: 6064095 (2000-05-01), Fu
patent: 6236073 (2001-05-01), Hsu
patent: 6509585 (2003-01-01), Huang
patent: 1-307271 (1989-12-01), None

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