Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-09-20
2009-10-20
Dickey, Thomas L (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C361S056000
Reexamination Certificate
active
07605431
ABSTRACT:
The present invention provides several embodiments with layout patterns for ESD protection. An apparatus with a layout pattern may be configured to protect I/O pads or the power rail. The layout pattern may designed to increase the current paths for ESD stress currents. For example, more rings may be applied. The present invention also provides circuit embodiments for ESD protection. According to one embodiment, an ESD protection circuit comprising four parasitic BJTs may be configured to protect the I/O pads or the power rail. More BJTs or resistors may be used to increase the current paths for ESD stress currents. Several variations and modifications may be made by changing the doping profiles of the doped regions.
REFERENCES:
patent: 6297536 (2001-10-01), Yu
patent: 6492208 (2002-12-01), Cheng et al.
patent: 6492859 (2002-12-01), Vashchenko et al.
patent: 7042028 (2006-05-01), Huang et al.
patent: 2002/0017654 (2002-02-01), Lee et al.
Baker & McKenzie LLP
Dickey Thomas L
Himax Technologies Limited
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