Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Reexamination Certificate
2006-01-17
2006-01-17
Baumeister, B. William (Department: 2891)
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
C257S566000
Reexamination Certificate
active
06987301
ABSTRACT:
An electrostatic discharge device may provide better protection of an integrated circuit by more uniform breakdown of a plurality of finger regions. The plurality of finger regions may extend through a first region of a substrate having a first conductivity type and into a second region of the substrate more lightly doped with impurities of the first conductivity type. An electrostatic discharge device may include a collector region having a middle region that may be highly doped with impurities of the first conductivity type. The middle region may be proximate to a layer that is lightly doped with impurities of the first conductivity type and a layer that is doped with impurities of the second conductivity type. The collector region may decrease the breakdown voltage of the electrostatic discharge device.
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U.S. Appl. No. 10/412,076, Office Action mailed Mar. 10, 2004.
Li Choy Hing
Zhang Xin Yi
Baumeister B. William
Farahani Dana
Marvell International Ltd.
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