Active solid-state devices (e.g. – transistors – solid-state diode – Field effect device – Having insulated electrode
Patent
1996-05-24
1999-05-25
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Field effect device
Having insulated electrode
257355, 257356, 257360, 257361, H01L 2362
Patent
active
059071745
ABSTRACT:
An electrostatic discharge (ESD) protecting transistor and a method for fabricating the same, capable of consuming a high voltage or overcurrent applied to a semiconductor circuit device and thereby protecting the circuit device from the high voltage or overcurrent. The ESD protecting transistor is of an asymmetric charge coupled MOS transistor structure having a highly doped buried layer capable of dispersing a current flux, thereby removing an instant ESD impact and reducing generation of heat caused by a concentration of high current flux. Accordingly, an effect of improving the resistance characteristic to the ESD impact is provided.
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Translation of JP 64-10657, Furnished with Previous Office Action.
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C.G. Jambotkar et al., IBM Tech. Discl. Bulletin, 23(11) 1981,4988 "High Voltage MOSFET Structure".
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Ko Jae Wan
Koo Yung Mo
Lee Woo Bong
Oh Se Jun
Yeo Tae Jung
Hyundai Electronics Industries Co,. Ltd.
Saadat Mahshid
Wilson Allan R.
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